PN7008ASEC-R1是一款MOS/IGBT驅動芯片,可替代IR2101S,昆山東森微電子代理銷售,并提供技術支持.

General Description
The PN7008 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.
Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross -conduction. Propagation delays are matched to simplify use in high frequency applications. It has two versions PN7008A & PN7008B.
 
Features
 * Fully operational to +600 V
 * 3.3 V logic compatible
 * dV/dt Immunity ±50 V/nsec
 * Floating channel designed for bootstrap operation
 * Gate drive supply range from 10.5 V to 20 V
 * UVLO for both channels
 * Output Source / Sink Current Capability 450mA /900mA (at Vcc = 15V)
 * Independent Logic Inputs to Accommodate All Topologies
 * -5V negative Vs ability
 * Matched propagation delay for both channels
 
Applications
 * Small and medium- power motor driver
 * Power MOSFET or IGBT driver
 * Half−Bridge Power Converters
 * Full-Bridge Power Converters
 * Any Complementary Drive Converters